集成电路（姿态传感器/陀螺仪） 海关归类咨询

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集成电路（姿态传感器/陀螺仪）

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用于入门级/中档智能手机和便携式电脑平台的iNEMO 6DoF惯性测量单元（IMU）

ST(意法半导体）

LSM6DS3TR-C

商品目录 姿态传感器/陀螺仪  加速度计轴向 X,Y,Z  加速度计量程(MAX) ±16g  陀螺仪轴向 X,Y,Z  陀螺仪量程(MAX) ±2000dps  传感器类型 IMU(加速度计+陀螺仪)  输出位数 16bit  属性 参数值  接口类型 I2C；SPI  工作电压 1.71V~3.6V  缓存大小 4KB  待机电流 3uA  工作温度 -40℃~+85℃  功能特性 运动事件检测；同步与时间戳

LSM6DS3TR-C is a system-in-package featuring a high-performance 3-axis digital accelerometer and 3-axis digital gyroscope. The integrated power-efficient modes are able to reduce the power consumption down to 0.90 mA in high-performance mode, combining always-on low-power features with superior sensing precision for an optimal motion experience for the consumer thanks to ultra-low noise performance for both the gyroscope and accelerometer. The LSM6DS3TR-C offers hardware flexibility to connect the pins with different mode connections to external sensors in order to expand functionalities such as adding a sensor hub, etc. Up to 4 kbyte of FIFO with dynamic allocation of accelerometer and gyroscope data allows overall power saving of the system. Like the entire portfolio of MEMS sensor modules, the LSM6DS3TR-C leverages the robust and mature in-house manufacturing processes already used for the production of micromachined accelerometers and gyroscopes. The various sensing elements are manufactured using specialized micromachining processes, while the IC interfaces are developed using CMOS technology that allows the design of a dedicated circuit which is trimmed to better match the characteristics of the sensing element. The LSM6DS3TR-C is available in a small plastic land grid array (LGA) package of 2.5 x 3.0 x 0.83 mm to address ultra-compact solutions.  DocID0 LSM6DS3TR - C是一款系统级封装产品，具备高性能三轴数字加速度计和三轴数字陀螺仪。 集成的节能模式能够在高性能模式下将功耗降低至0.90毫安。由于陀螺仪和加速度计均具备超低噪声性能，该产品将始终开启的低功耗特性与卓越的传感精度相结合，为消费者带来了绝佳的运动体验。 LSM6DS3TR - C具备硬件灵活性，可通过不同模式连接将引脚与外部传感器相连，以扩展功能，例如添加传感器集线器等。 高达4千字节的先进先出（FIFO）存储器，可动态分配加速度计和陀螺仪数据，从而实现系统整体的节能。 与整个MEMS传感器模块系列一样，LSM6DS3TR - C采用了已用于微机械加速度计和陀螺仪生产的强大且成熟的内部制造工艺。各种传感元件采用专门的微加工工艺制造，而集成电路（IC）接口则采用互补金属氧化物半导体（CMOS）技术开发，该技术能够设计出经过微调的专用电路，以更好地匹配传感元件的特性。 LSM6DS3TR - C采用2.5 x 3.0 x 0.83毫米的小型塑料焊盘栅格阵列（LGA）封装，适用于超紧凑解决方案。

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